BA779S

S MD Type Silicon PIN Diodes BA779;BA779S Diodes SOT-23 Unit: mm Wide frequency range 10 MHz to 1 GHz +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Forward Current Junction Temperature Storage temperature range Junction ambient Symbol VR IF Tj Tstg RthJA on PC board 50mm 50mm 1.6mm Test Conditions Value 30 50 125 -55 to +125 500 K/W Unit V mA Electrical Characteristics Ta = 25 Parameter Forward Voltage Reverse Current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime BA799 BA799S ô IF = 10 mA, IR = 10 mA Symbol VF IR CD rf zr Conditions IF = 20 mA V R = 30 V f = 100 MHz, V R = 0 f = 100 MHz, IF = 1.5 mA f = 100 MHz, V R = 0 5 9 4 K S Min Typ Max 1 50 0.5 50 Unit V nA pF +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1