BA782

S MD Type Bandswitching Diodes BA782; BA783 Diodes SOD-123 Unit: mm +0.05 1.1-0.05 +0.1 0.55-0.1 Features Silicon Epitaxial Planar Diode Switches For high-speed switching application and TV tuners in the frequency range of 50 1000 MHz. The dynamic for ward resistance is constant and very small 0.50 2.7 +0.1 -0.1 +0.1 3.7-0.1 0.1max over a wide range of frequency and forward current.The reverse capacitance is also small and largely independent of the reverse voltage. These diodes are also available in SOD-323 case with the type designations BA782S and BA783S. 0.35 A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e ve rs e V o lta g e F o rw a rd C o n tin u o u s C u rre n t a t T a m b = 2 5 J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re R a n g e S ym b o l VR IF Tj TS V a lu e 35 100 125 -5 5 to + 1 5 0 U n it V mA E le c tric a l C h a ra c te ris tic s T a = 2 5 P a ra m e te r F o rw a rd V o lta g e a t I F = 1 0 0 m A L e a k a g e C u rre n t a t V R = 2 0 V D y n a m ic F o rw a rd R e s is ta n c e a t f = 5 0 to 1 0 0 0 M H z , I F = 3 m A BA782 BA783 a t f = 5 0 to 1 0 0 0 M H z , I F = 1 0 m A BA782 BA783 C a p a c ita n c e at VR = 1 V, f = 1 M Hz at VR = 3 V, f = 1 M Hz BA782 BA783 S e rie s In d u c ta n c e a c ro s s C a s e Ls 2 .5 Ct 1 .5 ot S ym bol V (B R ) IR M in T yp M ax 1 50 +0.05 0.1-0.02 U n it V nA 0 .7 rf 1 .2 0 .5 0 .9 pF 1 .2 5 1 .2 nH +0.1 1.6-0.1 www.kexin.com.cn 1