BAP50-03

S MD Type General Purpose PIN Diode KAP50-03(BAP50-03) SOD-323 +0.1 1.7-0.1 Diodes Unit: mm Features Low diode capacitance. Low diode forward resistance. +0.05 0.3-0.05 +0.05 0.85-0.05 +0.1 2.6-0.1 1.0max 0.475 0.375 Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Total power dissipation TS = 90 Storage temperature Junction temperature Thermal resistance from junction to soldering point Symbol VR IF Ptot Tstg Tj Rth j-s Rating 50 50 500 -65 to +150 150 85 K/W Unit V mA mW Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse voltage Reverse current Symbol VF VR IR IF = 50 mA IR = 10 A 50 100 0.4 0.3 0.2 25 14 3 0.55 0.35 40 25 5 Testconditons Min Typ 0.95 Max 1.1 Unit V V nA pF pF pF VR = 50 V VR = 0; f = 1 MHz Diode capacitance Cd VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz IF = 0.5 mA; f = 100 MHz Diode forward resistance rD IF = 1 mA; f = 100 MHz IF = 10 mA; f = 100 MHz Marking Marking A5 +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1 S MD Type KAP50-03(BAP50-03) Typical Characteristics Diodes Tj = 25 ; f = 100 MHz. Tj = 25 ; f = 100 MHz. Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. Diode zero biased and inserted in series with a 50 stripline circuit (1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode inserted in series with a 50 analyzer Tee network. Tamb = 25 ° C. stripline circuit and biased via t Tamb = 25 . Fig.4 Isolation (|S21|2) of the diode as a function of frequency; typical values. Fig.3 Insertion loss (|S21|2) of the diode as a function of frequency; typical values. 2 www.kexin.com.cn