BAP51-03

S MD Type General purpose PIN diode BAP51-03 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Low diode capacitance Low diode forward resistance. 0.475 +0.1 2.6-0.1 1.0max 0.375 Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature thermal resistance from junction to soldering point Ts = 90 Symbol VR IF P tot T stg Tj R th j-s -65 -65 Min Max 50 50 500 +150 +150 120 K/W Unit V mA mW Electrical Characteristics Ta = 25 Parameter forward voltage reverse voltage reverse current Symbol VF VR IR Conditions IF = 50 mA IR = 10 A 50 100 0.4 0.3 0.2 5.5 3.6 1.5 550 0.55 0.35 40 25 5 ns pF Min Typ 0.95 Max 1.1 Unit V V nA VR = 50 V VR = 0; f = 1 MHz diode capacitance Cd VR = 1V; f = 1 MHz VR = 5V; f = 1 MHz IF = 0.5 mA; f = 100 MHz; note 1 diode forward resistance rD IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 charge carrier life time Note when switched from IF = 10 mA to IR = 6 mA; L RL = 100 ;measured at IR = 3 mA 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking A5 +0.05 0.1-0.02 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1