S MD Type
Silicon PIN diode BAP63-02
Diodes
SOD-523
+0.05 0.3-0.05 +0.1 1.2-0.1
Unit: mm
+0.1 0.6-0.1
High speed switching for RF signals Low diode capacitance Low diode forward resistance
0.07max
+0.1 1.6-0.1
+0.05 0.8-0.05
Features
+
-
0.77max
Very low series inductance. For applications up to 3 GHz.
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r c o n tin u o u s re ve rs e vo lta g e c o n tin u o u s fo rw a rd c u rre n t to ta l p o w e r d is s ip a tio n s to ra g e te m p e ra tu re ju n c tio n te m p e ra tu re th e rm a l re s is ta n c e fro m ju n c tio n to s o ld e rin g p o in t TS 90 S ym b o l VR IF P to t T s tg Tj R th
j-s
M in
M ax 50 100 715
U n it V mA mW
-6 5 -6 5
+150 +150 85 K /W
+0.05 0.1-0.02
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1
S MD Type
BAP63-02
Diodes
Electrical Characteristics Ta = 25
Parameter forward voltage reverse leakage current Symbol VF IR Conditions IF = 50 mA V R = 35 V V R = 0; f = 1 MHz diode capacitance Cd V R = 1 V; f = 1 MHz V R = 20V; f = 1 MHz IF = 0.5 mA; f = 100 MHz; note 1 diode forward resistance rD IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz; note 1 V R = 0; f = 900 MHz isolation |s21|2 V R = 0; f = 1800 MHz V R = 0; f = 2450 MHz V R = 0.5; f = 900 MHz insertion loss |s21|2 V R = 0.5; f = 1800 MHz V R = 0.5; f = 2450 MHz V R = 1; f = 900 MHz insertion loss |s21|2 V R = 1; f = 1800 MHz V R = 1; f = 2450 MHz V R = 10; f = 900 MHz insertion loss |s21|
2
Typ 0.95
Max 1.1 10
Unit V nA
0.36 0.32 0.25 2.5 1.95 1.17 0.9 15.6 10.3 8.3 0.19 0.24 0.28 0.16 0.20 0.25 0.10 0.16 0.20 0.09 0.14 0.18 310 0.6 s nH dB dB dB dB dB 0.32 3.5 3 1.8 1.5 pF
V R = 10; f = 1800 MHz V R = 10; f = 2450 MHz V R = 100; f = 900 MHz
insertion loss
|s21|
2
V R = 100; f = 1800 MHz V R = 100; f = 2450 MHz
charge carrier life time series inductance Note
when switched from IF = 10 mA to IR = 6 mA;
L
R L = 100 LS
;measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking K5
2
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