BAP64-02

S MD Type Silicon PIN diode BAP64-02 Diodes SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 0.6-0.1 Features RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Very low series inductance 0.07max +0.05 0.8-0.05 +0.1 1.2-0.1 High voltage, current controlled + - +0.1 1.6-0.1 0.77max For applications up to 3 GHz. Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature thermal resistance from junction to soldering point Ts = 90 Symbol VR IF P tot T stg Tj R th j-s -65 -65 Min Max 175 100 715 +150 +150 85 K/W Unit V mA mW Electrical Characteristics Ta = 25 Parameter forward voltage reverse leakage current Symbol VF IR Conditions IF = 50 mA VR =175 V VR =20 V VR = 0; f = 1 MHz diode capacitance Cd VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz IF = 0.5 mA; f = 100 MHz; note 1 diode forward resistance rD IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz; note 1 charge carrier life time series inductance Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. when switched from IF = 10 mA to IR = 6 mA; L Min Typ 0.95 Max 1.1 10 1 +0.05 0.1-0.02 Unit V A 0.48 0.35 0.23 20 10 2 0.7 1.55 0.6 0.35 40 20 3.8 1.35 s nH pF RL = 100 LS ,measured at IR = 3 mA Marking Marking S www.kexin.com.cn 1