BAP65-03

S MD Type Silicon PIN diode BAP65-03 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm High voltage, current controlled +0.1 2.6-0.1 1.0max RF resistor for RF switches Low diode capacitance Low diode forward resistance (low loss) Very low series inductance. +0.05 0.1-0.02 0.475 0.375 Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature thermal resistance from junction to soldering point TS 90 Symbol VR IF P tot T stg Tj R th j-s -65 -65 Min Max 30 100 500 +150 +150 120 K/W Unit V mA mW +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1 S MD Type BAP65-03 Electrical Characteristics Ta = 25 Parameter forward voltage reverse leakage current Symbol VF IR Conditions IF = 50 mA VR = 20 V VR = 0; f = 1 MHz diode capacitance Cd VR = 1 V; f = 1 MHz VR = 3 V; f = 1 MHz VR = 20V; f = 1 MHz IF = 1 mA; f = 100 MHz; note 1 diode forward resistance rD IF = 5 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz VR = 0; f = 900 MHz isolation |s21|2 VR = 0; f = 1800 MHz VR = 0; f = 2450 MHz VR = 1; f = 900 MHz insertion loss |s21|2 VR = 1; f = 1800 MHz VR = 1; f = 2450 MHz VR = 5; f = 900 MHz insertion loss |s21|2 VR = 5; f = 1800 MHz VR = 5; f = 2450 MHz VR = 10; f = 900 MHz insertion loss |s21|2 VR = 10; f = 1800 MHz VR = 10; f = 2450 MHz VR = 100; f = 900 MHz insertion loss |s21| 2 Diodes Typ 0.95 Max 1.1 20 Unit V nA 0.65 0.55 0.5 0.375 1 0.65 0.56 0.35 10.2 5.8 4.1 0.1 0.14 0.18 0.06 0.1 0.14 0.06 0.1 0.13 0.05 0.1 0.14 0.17 1.5 ìs nH dB dB dB dB dB 0.95 0.9 0.9 0.8 pF VR = 100; f = 1800 MHz VR = 100; f = 2450 MHz charge carrier life time series inductance Note when switched from IF = 10 mA to IR = 6 mA; L RL = 100 LS ;measured at IR = 3 mA IF = 100 mA; f = 100 MHz 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking D3 2 www.kexin.com.cn