BAP70-03

S MD Type Silicon PIN diode BAP70-03 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm High voltage, current controlled RF resistor forattenuators +0.1 2.6-0.1 1.0max Low diode capacitance Very low series inductance. 0.475 0.375 Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature thermal resistance from junction to soldering point Ts = 90 Symbol VR IF P tot Tstg Tj Rth j-s -65 -65 Min Max 50 100 500 +150 +150 120 K/W Unit V mA mW Electrical Characteristics Ta = 25 Parameter forward voltage reverse leakage current Symbol VF IR Conditions IF = 50 mA V R = 30 V V R = 0; f = 1 MHz diode capacitance Cd V R = 1 V; f = 1 MHz V R = 5 V; f = 1 MHz V R = 20V; f = 1 MHz IF = 0.5 mA; f = 100 MHz diode forward resistance rD IF = 1 mA; f = 100 MHz IF = 10 mA; f = 100 MHz IF = 100 mA; f = 100 MHz charge carrier life time series inductance when switched from IF = 10 mA to IR = 6 mA; L Typ 0.95 Max 1.1 20 +0.05 0.1-0.02 Unit V nA 570 400 270 200 77 40 5.4 1.4 1.25 1.5 250 100 50 7 1.9 ìs nH fF R L = 100 LS ;measured at IR = 3 mA IF = 100 mA; f = 100 MHz Marking Marking A9 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1