BAR14

S MD Type Silicon PIN Diodes BAR14;BAR15;BAR16 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 RF switch RF attenuator for frequencies above 10 MHz Low distortion factor Long-term stability of electrical characteristics +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute M axim um R atings T a = 25 P aram eter R everse voltage Forward current Total power dissipation, Junction tem perature S torage tem perature O perating tem perature range Junction - am bient 1) Junction - soldering point N ote 1. P ackage m ounted on alum ina 15 m m 16.7 m m 0.7 m m . TS 65 1) S ym bol VR IF P tot Tj T stg T op R thJA R thJS V alue 100 140 250 150 -55 to +150 -55 to +150 500 340 U nit V mA mW K /W Electrical Characteristics Ta = 25 Param eter Reverse current Forward voltage Diode capacitance Sym bol VR VF CT Test Condition V R = 50 V V R = 100 V I F = 100 m A V R = 50 V, f = 1 MHz V R = 0 , f = 100 MHz I F = 0.01 m A, f = 100 MHz Forward resistance rf I F = 0.1 m A, f = 100 MHz I F = 1 m A, f = 100 MHz I F = 10 m A, f = 100 MHz Zero bias conductance Charge carrier life tim e gp t rr V R = 0, f = 100 MHz I F = 10 m A, I R = 6 m A 0.7 1.05 0.25 0.2 2800 380 45 7 50 1 S S 0.5 Min Typ Max 100 1 Unit nA A V pF Marking Type Marking BAR14 L7 BAR15 L8 BAR16 L9 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1