BAR50-03W

S MD Type Silicon PIN Diodes BAR50-03W Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Features Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz Especially useful as antenna switch in mobile communication Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) VLow forward resitance Very low harmonics 0.475 +0.1 2.6-0.1 +0.05 0.3-0.05 +0.05 0.85-0.05 1.0max 0.375 A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r D io d e re v e rs e v o lta g e F o rw a rd c u rre n t T o ta l p o w e r d is s ip a tio n J u n c tio n te m p e ra tu re O p e ra tin g te m p e ra tu re ra n g e S to ra g e te m p e ra tu re ra n g e J u n c tio n - s o ld e rin g p o in t 1) S ym bol VR IF TS 116 P to t Tj To p V a lu e 50 100 250 150 -5 5 to + 1 2 5 -5 5 to + 1 5 0 135 U n it V mA mW T s tg R th J S K /W +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1 S MD Type BAR50-03W Electrical Characteristics Ta = 25 Parameter Reverse current Forward voltage Symbol IR VF Conditions VR = 50 V IF = 50 mA VR = 1 V, f = 1 MHz Diode capacitance CT VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1...1.8 GHz, all other VR = 0 V, f = 100 MHz Reverse parallel resistance Rp VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz IF = 0.5 mA, f = 100 MHz Forward resistance rf IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier life time I-region width IF = 10 mA, IR = 6 mA,measured at rr Diodes Min Typ Max 50 Unit nA V 0.95 0.24 0.2 0.2 0.15 25 6 5 25 16.5 3 1100 56 1.1 0.5 0.4 pF K 40 25 4.5 ns ìm IR = 3 mA,RL = 100 WI IF = 3 mA, f = 1.8 GHz Insertion loss |S21|2 IF = 5 mA, f = 1.8 GHz IF = 18 mA, f = 1.8 GHz VR = 0 V, f = 0.9 GHz Isolation |S21|2 VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz VR = 0 V, f = 5.6 GHz -0.56 -0.4 -0.27 -24.5 -20 -18 -12 dB dB Marking Marking blue A 2 www.kexin.com.cn