BAR60

S MD Type Silicon PIN Diodes BAR60;BAR61 Diodes Unit: mm Features RF switch RF attenuator for frequencies above 10 MHz Absolute M axim um R atings T a = 25 P aram eter R everse voltage Forward current Total power dissipation, T S Junction tem perature S torage tem perature range O perating tem perature range Junction - am bient 1) S ym bol VR IF V alue 100 140 250 150 -55 to +150 -55 to +150 580 340 U nit V mA mW 65 (N ote 1) P tot Tj T stg T op R th R th JA JS K /W K /W Junction - soldering point N ote 1.U nit R ating.Total R ating = U nit R ating 1.5 Electrical Characteristics Ta = 25 Parameter Reverse current Forward voltage Diode capacitance Zero bias conductance Charge carrier life time Symbol IR VF CT gp ôL Conditions V R = 50 V V R = 100 V IF = 100 mA V R = 50 V, f = 1 MHz V R = 0, f = 100 MHz V R =0 V,f=100 MHz IF = 10 mA, IR = 6 mA f = 100 MHz, IF = 0.01 mA Differential forward resistance rf IF = 0.1 mA IF = 1.0 mA IF = 10 mA 0.25 0.2 50 1 2800 380 45 7 S S Min Typ Max 100 1 1.25 0.5 Unit nA A V pF Marking Type Marking BAR60 60 BAR61 61 www.kexin.com.cn 1