BAR63

S MD Type Silicon PIN Diode BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e v e rs e v o lta g e F o rw a rd c u rre n t T o ta l p o w e r d is s ip a tio n BAR63 TS 80 TS 55 T op T s tg P to t 250 250 -5 5 to + 1 5 0 -5 5 to + 1 5 0 mW S ym bol VR IF V a lu e 50 100 U n it V mA B A R 6 3 -0 4 ,-0 5 ,-0 6 O p e ra tin g te m p e ra tu re ra n g e S to ra g e te m p e ra tu re ra n g e J u n c tio n - a m b ie n t BAR63 B A R 6 3 -0 4 ,-0 5 ,-0 6 J u n c tio n - s o ld e rin g p o in t BAR63 B A R 6 3 -0 4 ,-0 5 ,-0 6 N o te 1 . P a c k a g e m o u n te d o n a lu m in a 1 5 m m 1 6 .7 m m 1) R th J A 450 540 K /W R th J S 280 380 K /W 0 .7 m m +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type BAR 63;BAR63-04 BAR 63-05;BAR63-06 Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Reverse leakage Forward voltage Diode capacitance Symbol V (BR) IR VF CT Test Condition IR = 5 A Min 50 50 0.95 0.3 0.21 1.2 1 75 1.4 ns nH 0.3 2 1.2 Typ Max Unit V nA V pF pF V R = 20 V IF = 100 mA V R = 0 , f = 100 MHz V R = 5 V , f = 1 MHz Forward resistance Charge carrier life time Series inductance rf ôS LS IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA,IR = 3 mA Marking Type Marking BAR 63 G3 BAR 63-04 G4 BAR 63-05 G5 BAR 63-06 G6 2 www.kexin.com.cn