S MD Type
Silicon PIN Diode BAR64-02W
Diodes
SOD-523
+0.05 0.3-0.05 +0.1 1.2-0.1
Unit: mm
+0.1 0.6-0.1
Features
Frequency range above 1 MHz Low resistance and short carrier lifetime Very low inductance For frequencies up to 3 GHz
0.07max
+0.05 0.8-0.05
High voltage current controlled RF resistor for RF attenuator and switches
+
-
+0.1 1.6-0.1
0.77max
Extremely small plastic SMD package
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r D io d e re v e rs e v o lta g e F o rw a rd c u rre n t T o ta l p o w e r d is s ip a tio n , J u n c tio n te m p e ra tu re O p e ra tin g te m p e ra tu re ra n g e S to ra g e te m p e ra tu re J u n c tio n - a m b ie n t (N o te 1 ) J u n c tio n - s o ld e rin g p o in t N o te 1 .P a c k a g e m o u n te d o n a lu m in a 1 5 m m 1 6 .7 m m 0 .7 m m TS 125 S ym bol VR IF P to t Tj T op T s tg R th J A R th J S V a lu e 200 100 250 150 -5 5 to + 1 5 0 -5 5 to + 1 5 0 220 140 K /W U n it V mA mW
Electrical Characteristics Ta = 25
Parameter Breakdown voltage Forward voltage Diode capacitance Case capacitance Symbol VR VF CT CC Test Condition I(BR) = 5 A Min 200 1.1 0.23 0.09 12.5 2.1 0.85 1.55 0.6 20 3.8 1.35 s nH 0.35 Typ Max Unit V mV pF
IF = 50 mA V R = 20 V, f = 1 MHz f = 1 MHz IF = 1 mA, f = 100 MHz
Forward resistance
rf
IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz
Charge carrier life time Series inductance
trr Ls
IF = 10 mA, IR = 6 mA,IR = 3 mA
Marking
Marking M
+0.05 0.1-0.02
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