BAR64-03W

S MD Type Silicon PIN Diode BAR64-03W Diodes SOD-323 +0.1 1.7-0.1 Unit: mm High voltage current controlled RF resistor for RF attenuator and swirches +0.1 2.6-0.1 Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz +0.05 0.1-0.02 1.0max 0.475 0.375 Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Forward current Total Power dissipation Junction tem perature Operating tem perature range Storage tem perature range Junction - soldering point Note: 1.Package m ounted on alum ina 15m m x 16.7m m x 0.7m m 1) Sym bol VR IF Value 200 100 250 150 -55 to +150 -55 to +150 450 Unit V mA mW TS 25 P tot Tj T op T stg R thJA K/W Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Diode capacitance Symbol V(BR) VF CT Conditions IR = 5 A Min 200 1.1 0.23 12.5 2.1 0.85 1.55 2 0.35 20 3.8 1.35 s nH Typ Max Unit V V pF VR = 20 V, f = 1 MHz VR = 0 V, f = 100 MHz IF = 1 mA, f = 100 MHz Forward resistance rf IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier life time Series inductance rr IF = 10 mA, IR = 6 mA,IR = 3mA Ls Marking Marking 2 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1