BAR64-04

S MD Type Silicon PIN Diode BAR64;BAR64-04 BAR64-05;BAR64-06 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz +0.1 0.38-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e v e rs e v o lta g e F o rw a rd c u rre n t T o ta l p o w e r d is s ip a tio n BAR64 TS 90 TS 65 Tj T op T s tg P to t 250 250 150 -5 5 to + 1 5 0 -5 5 to + 1 5 0 mW S ym bol VR IF V a lu e 200 100 U n it V mA B A R 6 3 -0 4 ,-0 5 ,-0 6 J u n c tio n te m p e ra tu re O p e ra tin g te m p e ra tu re ra n g e S to ra g e te m p e ra tu re ra n g e J u n c tio n - a m b ie n t BAR64 B A R 6 4 -0 4 ,-0 5 ,-0 6 J u n c tio n - s o ld e rin g p o in t BAR64 B A R 6 4 -0 4 ,-0 5 ,-0 6 N o te 1 . P a c k a g e m o u n te d o n a lu m in a 1 5 m m 1 6 .7 m m 1) R th J A 320 500 K /W R th J S 240 340 K /W 0 .7 m m 0-0.1 www.kexin.com.cn 1 S MD Type BAR64;BAR64-04 BAR64-05;BAR64-06 Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Diode capacitance Symbol V (BR) VF CT Test Condition IR = 5 A Min 200 1.1 0.23 12.5 2.1 0.85 1.55 1.4 0.35 20 3.8 1.35 s nH Typ Max Unit V V pF IF = 50 mA V R = 20 V , f = 1 MHz IF = 1 mA, f = 100 MHz Forward resistance rf IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier life time Series inductance ôS LS IF = 10 mA, IR = 6 mA,IR = 3 mA Marking Type Marking BAR64 Pos BAR64-04 PPs BAR64-05 PRs BAR64-06 PSs 2 www.kexin.com.cn