BAR65-02W

S MD Type Silicon RF Switching Diode BAR65-02W Diodes SOD-523 +0.05 0.3-0.05 +0.1 1.2-0.1 Unit: mm +0.1 0.6-0.1 Low loss, low capacitance PIN-diode Band switch for TV-tuners Series diode for mobile communication transmit-receiver switch 0.07max +0.05 0.1-0.02 +0.1 1.6-0.1 +0.05 0.8-0.05 Features + - 0.77max A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage F orw ard current O perating tem perature range S torage tem perature S ym bol VR IF T op T stg V alue 30 100 -55 to + 125 -55 to + 150 U nit V mA Electrical Characteristics Ta = 25 Param eter Reverse current Forward voltage Diode capacitance Sym bol VR VF CT Test Condition V R = 20 V I F = 100 m A V R = 1 V, f = 1 MHz V R = 3 V, f = 1 MHz Forward resistance Series inductance rf Ls I F = 5 m A, f = 100 MHz I F = 10 m A, f = 100 MHz 0.93 0.6 0.57 0.65 0.56 0.6 Min Typ Max 20 1 0.9 0.8 0.95 0.9 nH Unit nA V pF Marking Marking N www.kexin.com.cn 1