BAR65-03W

S MD Type Silicon RF Switching Diode BAR65-03W Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Low loss, low capacitance PIN-diode +0.1 2.6-0.1 1.0max Band switch for TV-tuners Series diode for mobile communications transmit-receive switch 0.475 0.375 Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Operating tem perature range Storage tem perature range Sym bol VR IF T op T stg Value 30 100 -55 to +125 -55 to +150 Unit V mA Electrical Characteristics Ta = 25 Parameter Reverse current Forward voltage Diode capacitance Symbol IR VF CT Conditions V R = 20 V, T A = 25 IF = 100 mA V R = 1 V, f = 1 MHz V R = 3 V, f = 1 MHz Forward resistance Series inductance rf Ls IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz 0.93 0.6 0.57 0.65 0.56 1.8 Min Typ Max 20 1 0.9 0.8 0.95 0.9 nH Unit nA V pF Marking Marking blue M +0.05 0.1-0.02 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1