BAR74

S MD Type Silicon Switching Diode BAR74 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 For high-speed switching applications +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Peak reverse volatge Forward current Surege forward current, T = 1 s Sym bol VR V RM IF I FS P tot Tj T stg R th JA R th JS Value 50 50 250 4.5 370 150 -65 to +150 330 260 1.5 m m /6 cm 2 Cu. K/W K/W Unit V V mA A mW Total power dissipation, Ts = 54 Junction tem perature Storage tem perature range Junction am bient (Note 1) Junction soldering point Note 1. Package m ounted on epoxy pcb 40 m m 40 m m Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Reverse current Diode capacitance Reverse recovery time Symbol VR VF IR CD trr Conditions IR =100 A Min 50 1 0.1 100 2 4 Typ Max Unit V V A pF ns IF = 100 mA VR = 50 V VR = 50 V,Ta = 150 VR = 0 V,f = 1 MHz IF = IR = 10 mA,RL = 100 ,measured at IR = 1 mA Marking Marking JBs +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1