BAR99

S MD Type Silicon Switching Diode BAR99 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 For high-speed switching +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter R everse voltage P eak reverse volatge F orw ard current S urege forw ard current, T = 1 s S ym bol VR V RM IF IF S P to t Tj T stg R th R th JA JS V alue 70 70 250 4.5 370 150 -65 to +150 330 260 1.5 m m /6 cm 2 C u. U nit V V mA A mW T otal pow er dissipation, T s = 54 Junction tem perature S torage tem perature range Junction am bient (N ote 1) Junction soldering point N ote 1. P ackage m ounted on epoxy pcb 40 m m K /W K /W 40 m m +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type Silicon Switching Diode BAR99 Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Symbol VR Conditions IR =100 A Min 70 715 855 1000 1250 2.5 30 50 1.5 6 pF ns A mV Typ Max Unit V IF = 1 mA Forward voltage VF IF = 10 mA IF = 50 mA IF = 150 mA V R = 70 V Reverse current IR V R = 25 V,T A = 150 V R = 70 V,T A = 150 Diode capacitance Reverse recovery time CD trr V R = 0 V,f = 1 MHz IF = IR = 10 mA,R L = 100 measured at IR = 1 mA Marking Marking JGs 2 www.kexin.com.cn