BAS140WS

S MD Type SILICON SWICHING DIODE BAS140WS Diodes SOD-323 +0.1 1.7-0.1 Unit: mm General purpose diodes for high-speed switching +0.1 2.6-0.1 1.0max Circuit protection Voltage clamping High-level detecting and mixing +0.05 0.1-0.02 0.475 0.375 Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage Forward current Surge forward current Total power dissipation Operating temperature range Storage Temperature range Junction ambient(1) Junction- soldering point Note: 1.Package mounted on an epoxy pcb 40 mm 40 mm 15 mm/1cm2 Cu. t Ts 1.0 113 s Symbol VR IF IFSM Ptot Top Tstg RthJA RthJS Value 40 120 200 250 -55 to+125 -65 to+150 260 150 K/W K/W Unit V mA mA mW Electrical Characteristics Ta = 25 Param eter Breakdown voltage Forward voltage IF = 1 m A I F = 10 m A I F = 15 m A Reverse current V R = 30 V V R = 40 V Diode capacitance Differential forward resistance Series inductance V R = 0; f = 1 MHz I F = 10 m A, f = 10 KHz CT RF Ls 3 10 2 nH IR 1 10 5 pF A VF 250 350 600 310 450 720 380 500 1000 mV I (BR) = 10 A Sym bol V (BR) Min 40 Typ Max Unit V Marking Marking 4 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1