BAS16-03W

S MD Type SILICON SWICHING DIODE BAS16-03W Diodes SOD-323 +0.1 1.7-0.1 Unit: mm For high-speed Switching applications +0.1 2.6-0.1 1.0max 0.475 0.375 Absolute Maximum Ratings Ta = 25 Parameter Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current Total power dissipation Junction Temperature Storage Temperature Junction soldering point(1) Note: 1.For calculation of R thJA please refer to Application Note Thermal Resistance t = 1.0 Ts s 116 Symbol VR V RM IF IFSM P tot Tj , T stg R thJS Value 80 85 250 4.5 250 150 -65 to+150 135 K/W mA A mW Unit V +0.05 0.1-0.02 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1 S MD Type SILICON SWICHING DIODE BAS16-03W Diodes Electrical Characteristics Ta = 25 Param eter Breakdown voltage I (BR) = 100 V R = 75 V Reverse current V R = 25 V,T A = 150 V R = 75 V,T A = 150 IF = 1 m A I F = 10 m A Forward voltage I F = 50 m A I F = 100 m A I F = 150 m A Forward recovery voltage Diode capacitance Reverse Recovery Tim e I F = 10 m A; I R = 10 m A; m easured at I R = 1m A, R L = 100 I F = 10 m A,tp = 20 ns V R = 0; f = 1 MHz V fr CT t rr VF IR A Sym bol V (BR) Min 85 0.1 30 50 715 855 1000 1200 1250 1.75 2 4 V V nS mV A Typ Max Unit V Marking Marking B 2 www.kexin.com.cn