BAS16

S MD Type High-speed diode BAS16 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Small plastic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFRM square wave; Tj =25 Non-repetitive peak forward current IFSM t=1 s t = 1 ms t=1s Total power dissipation Storage temperature Junction temperature Note 1. Device mounted on an FR4 printed-circuit board. Ptot Tstg Tj Tmab = 25 ; Note 1 -65 prior to surge; 4 1 0.5 250 +150 150 mW A Note 1 Conditions Min Max 60 60 250 600 Unit V V mA mA +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type High-speed diode BAS16 Diodes Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 1 mA; Forward voltage VF IF = 10 mA; IF = 50 mA; IF = 100 mA; V R = 25 V; Reverse current IR V R = 75 V; V R = 75 V; T j = 150 V R = 75 V; T j = 150 Diode capacitance Reverse recovery time Forward recovery voltage Cd trr Vf r f = 1 MHz; V R = 0; when switched from IF = 10 mA to IR = 10 mA; R L = 100 ;measured at IR =1 mA; 1.75 V Max 715 855 1 1.25 30 1 30 50 1.5 4 nA A A A pF ns V Unit mV when switched from IF = 10 mA;tr = 20 ns; Marking Marking A6p 2 www.kexin.com.cn