BAS170WS

S MD Type Schottky Diodes BAS170WS Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing 0.475 +0.1 2.6-0.1 1.0max 0.375 Absolute Maximum Ratings Ta = 25 PARAMATER Repetitive peak reverse voltage Forward continuous current Surge forward current Power Dissipation (1) SYMBOL VRM IF IFSM Ptot RèJA Tj Ramb Ts TEST CONDITION VALUE 70 UNIT V mA mA mW /W Tamb = 25 tp < 1 s, Tamb = 25 Tamb = 25 70 600 200 650 150 -55 to+125 -55 to+125 Thermal resistance junction to ambient air(1) Junction temperature Operating temperature range Storage temperature range 1.valid provided that electrodes are kept at ambient temperature Electrical Characteristics Ta = 25 PARAMATER Reverse breakdown voltage Leakage current SYMBOL V(BR)R IR TEST CONDITION IR = 10 A(Pulse) MIN 70 0.1 10 375 705 880 1.5 100 34 410 750 1000 2 TYP MAX UNIT V A A V V mV pF ps VR =50 V VR =70 V Forward voltage Forward voltage (1) Capacitance Charge carrier lifetime Differential forward resistance Note: 1.Pulse test: tp 300 s VF VF Ctot t RF IF = 200 mA I < tief < F = 10 mA VF = 15 mA VR =0 V, f =1 MHz IF = 25 mA; IE = 5 mA; f = 10 kHz Marking Marking 73 +0.05 0.1-0.02 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1