BAS216

S MD Type HIGH-SPEED SWITCHING DIODE BAS216 Diodes SOD110 Unit: mm Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V Repetitive peak forward current:max. 500 mA. cathode idenfifier Absolute Maximum Ratings Ta = 25 Parameter Continuous peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFSM square wave; Tj = 25 Non-repetitive peak forwrad current IFSM t=1 A prior to surge; 4 1 0.5 ;note 1 -65 400 +150 150 mW A Note 1 Conditions Min Max 85 75 250 500 Unit V V mA mA t = 1 ms t=1s Total power dissipation Storage temperature Junction temperature Note 1. Device mounted on an FR4 printed-circuit board. Ptot Tstg Tj Tamb = 25 www.kexin.com.cn 1 S MD Type HIGH-SPEED SWITCHING DIODE BAS216 Diodes Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 1 mA forward voltage VF IF = 10 mA IF = 50 mA IF = 150 mA VR = 25 V capacitance reverse current IR VR = 75 V VR = 25 V, Tj = 150 VR = 25 V, Tj = 150 diods capacitance Cd VR = 1 V, f = 1 MHz when switched from IF = 10 mA to reverse recovery time trr IR = 10 mA; RL = 100 measured at IR = 1 mA forward recovery voltage Note 1.Pulsed test: tp = 300 s, ä = 0.02. Vrr when switched from IF = 10 mA;tr = 20 ns 1.75 V 4 ns Min Max 715 855 1 1.25 30 1 30 50 1.5 Unit mV mV V V nA A A A pF Marking Marking A6 2 www.kexin.com.cn