BAS28W

S MD Type Silicon Switching Diode Array BAS28W Diodes SOT-343 Unit: mm Features For high-speed switching applications Electrical insulated diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r D io d e re ve rs e vo lta g e P e a k re ve rs e vo lta g e F o rw a rd c u rre n t S u rg e fo rw a rd c u rre n t, t = 1 s S ym b o l VR V RM IF IF S P to t Tj T s tg R th R th JA JS V a lu e 75 85 200 4 .5 250 150 -5 5 to + 1 5 0 460 190 U n it V V mA A mW T o ta l p o w e r d is s ip a tio n , T S = 1 0 3 J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re ra n g e J u n c tio n - a m b ie n t 1) K /W K /W J u n c tio n - s o ld e rin g p o in t N o te 1 .P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m 40m m 1 .5 m m / 0 .5 c m 2 C u www.kexin.com.cn 1 S MD Type BAS28W Electrical Characteristics Ta = 25 Parameter Breakdown voltage Symbol I(BR) Test Condition V R = 40 V IF = 1 mA Forward voltage IF IF = 10 mA IF = 50 mA IF = 150 mA V R = 75 V Reverse current IR V R = 25 V, T A = 150 V R = 75 V, T A = 150 Diode capacitance Reverse recovery time CD trr f = 1 MHz; V R = 0 IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1mA Min 85 715 855 Typ Max Diodes Unit V mV 1000 1250 1 30 50 2 6 pF ns A Marking Marking JTs 2 www.kexin.com.cn