S MD Type
General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35
(BAS29/BAS31/BAS35)
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Diodes
Unit: mm
+0.1 2.4-0.1
General application
+0.1 1.3-0.1
Small plastic SMD package
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
KAS29
KAS31
KAS35
Absolute Maximum Ratings Ta = 25
Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current* 1 single diode loaded; double diode loaded; Repetitive peak forward current Non-repetitive peak forward current square wave; Tj = 25 prior to surge; t=1 s t = 100 t=1s Total power dissipation Ta = 25 Repetitive peak reverse current Repetitive peak reverse energy *2 Thermal resistance from junction to tie-point Thermal resistance from junction to ambient * 1 Junction temperature Storage temperature *1 Device mounted on an FR4 printed-circuit board. *2 tp 50 s; f 20 Hz; Tj = 25 *1 s Ptot IRRM ERRM Rth j-tp Rth j-a Tj Tstg IFRM Symbol VRRM VR IF Rating 110 90 250 150 600 10 IFSM 4 0.75 250 600 5 360 500 150 -65 to +150 A A mW mA mJ K/W K/W mA A Unit V V mA
+0.1 0.38-0.1
0-0.1
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1
S MD Type
KAS29/KAS31/KAS35
(BAS29/BAS31/BAS35)
Electrical Characteristics Ta = 25
Parameter Symbol Testconditons IF = 10 mA IF = 50 mA Forward voltage VF IF = 100 mA IF = 200 mA IF = 400 mA Reverse current Reverse avalanche breakdown voltage Diode capacitance Reverse recovery time IR V(BR)R Cd trr VR = 90 V VR = 90 V; Tj = 150 IR = 1 mA f = 1 MHz; VR = 0 when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ù; measured at IR = 3 mA 120 Min Typ
Diodes
Max 750 840 900 1 1.25 100 100 170 35 50
Unit mV mV mV V V nA A V pF ns
Marking
NO. Marking KAS29 L20 KAS31 L21 KAS35 L22
2
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S MD Type
KAS29/KAS31/KAS35
(BAS29/BAS31/BAS35)
Typlcal Characteristics
Diodes
Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded.
(1) Tj = 150 (2) Tj = 25 (3) Tj = 25
; typical values. ; typical values. ; maximum values.
Fig.1 Maximum Permissible Continuous Forward Current as a Function Of Ambient Temperature.
Fig.2 Forward Current as a Function of Forward Voltage.
Based on square wave currents. Tj = 25 ° prior to surge. C
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
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3
SMD Type
KAS29/KAS31/KAS35
(BAS29/BAS31/BAS35)
Diodes
f = 1 MHz; Tj = 25 ° C.
(1) VR = 90 V; maximum values. (2) VR = 90 V; typical values.
Fig.5 Diode Capacitance as a Function Of Reverse Voltage; Typical Values.
Fig.4 Reverse Current as a Function of Junction Temperature.
4
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