S MD Type
Schottky Barrier (Double) Diodes BAS40-07
Diodes
Unit: mm
Features
Low forward voltage Guard ring protected Small plastic SMD package Low diode capacitance.
Absolute Maximum Ratings Ta = 25
Parameter continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Tstg Tj Tamb Rth j-a -65 tp 1 s;ä tp < 10 ms -65 0.5 Test Condition MIN MAX 40 120 120 200 +150 150 +150 500 K/W Unit V mA mA A
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1
S MD Type
BAS40-07
Diodes
E le c tric a l C h a ra c te ris tic s T a = 2 5
P a ra m e te r S ym b o l T e s t C o n d itio n IF = 1 m A fo rw a rd vo lta g e VF IF = 1 0 m A IF = 4 0 m A re ve rs e c u rre n t d io d e c a p a c ita n c e N o te 1 . P u ls e te s t: t p = 3 0 0 m s ; ä = 0 .0 2 . IR Cd V R = 3 0 V ;n o te 1 V R = 4 0 V ;n o te 1 f = 1 M H z; V R = 0 M in M ax 380 500 1 1 10 5 U n it mV mV V nA A pF
Marking
Marking 47
2
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