BAS678

S MD Type High-speed diode BAS678 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Small plastic SMD package High switching speed: max. 6ns Continuous reverse voltage: max. 80 V Repetitive peak forward current: max. 600 mA. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFRM square wave; Tj =25 Non-repetitive peak forward current IFSM t=1 t = 100 prior to surge; s s 9 3 1.7 250 -65 +150 150 mW A Note 1 Conditions Min Max 100 80 250 600 Unit V V mA mA t = 10 ms Total power dissipation Storage temperature Junction temperature Note 1. Device mounted on an FR4 printed-circuit board. Ptot Tstg Tj Tmab = 25 ; Note 1 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type High-speed diode BAS678 Diodes Electrical Characteristics Ta = 25 Parameter Forward voltage Symbol VF Conditions IF = 200 mA;d.c. ; Note 1 VR = 10 V; Reverse current IR VR = 75 V; VR = 75 V; Tj = 150 Diode capacitance Reverse recovery time Forward recovery voltage thermal resistance from junction to tie-point thermal resistance from junction to ambient Note 1. Tamb = 25 ; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. Cd trr Vf r Rth j-tp Rth j-a f = 1 MHz; VR = 0; when switched from IF = 400 mA to IR = 400 mA; RL = 100 ;measured at IR = 40 mA; 2 330 500 V K/W K/W Min Max 1.0 15 100 50 2 6 Unit V nA nA A pF ns when switched from IF = 10 mA;tr = 20 ns; Marking Marking L52 2 www.kexin.com.cn