BAS70-04W

S MD Type Schottky barrier(double) diodes BAS70W;BAS70-04W BAS70-05W;BAS70-06W Diodes Features Low forward voltage High breakdown voltage Guard ring protected Very small SMD package Low capacitance. Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VR IF IFRM IFSM T stg Tj T amb R th j-a Note 1 -65 tp tp 1 s; ä 0.5 Conditions Min Max 70 70 70 100 -65 +150 150 +150 625 K/W Unit V mA mA mA 10 ms E lectrical C haracteristics T a = 25 P aram eter S ym bol C ondition IF = 1 m A Forward V oltage VF I F = 10 m A I F = 15 m A R everse C urrent C harge carrier life tim e (K rakauer m ethod) D iode capacitance N ote 1. P ulse test: tp = 300 m s; d = 0.02. Cd IR V R = 50 V ; note 1 V R = 70 V ; note 1 IF = 5 m A f = 1 M H z; V R = 0 M ax 410 750 1 100 10 100 2 U nit mV mV V nA A ps pF Marking Type Marking BAS70W 73* BAS70-04W 74* BAS70-05W 75* BAS70-06W 76* www.kexin.com.cn 1