BAS70-07

S MD Type Schottky Barrier (Double) Diodes BAS70-07 Diodes Unit: mm Features Low forward voltage High breakdown voltage Guard ring protected Small plastic SMD package Low diode capacitance. Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Tstg Tj Tamb Rth j-a -65 tp 1 s;ä tp < 10 ms -65 0.5 Test Condition MIN MAX 70 70 70 100 +150 150 +150 500 K/W Unit V mA mA A Electrical Characteristics Ta = 25 Parameter Symbol Test Condition IF = 1 mA forward voltage VF IF = 10 mA IF = 15 mA reverse current charge carrier life time (Krakauer method) diode capacitance Note 1. Pulse test: tp = 300 ms; ä = 0.02. IR ô Cd V R = 50 V;note 1 V R = 70 V;note 1 IF = 5 mA f = 1 MHz; V R = 0 Min Max 410 750 1 100 10 100 2 Unit mV mV V nA A ps pF Marking Marking 77 www.kexin.com.cn 1