BAS70

S MD Type Schottky barrier (double) diodes BAS70 series Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low forward current High breakdown voltage Guard ring protected Small plastic SMD package Low diode capacitance. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Tstg Tj Tamb Rth j-a -65 tp 1 s; ä tp < 10 ms -65 0.5 Conditions Min Max 70 70 70 100 +150 150 +150 500 K/W Unit V mA mA mA Electrical C haracteristics T a = 25 P aram eter Forward voltage S ym bol VF Conditions IF = 1 m A I F = 10 m A I F = 15 m A Reverse voltage leakage current Charge carrier life tim e (K rakauer m ethod) Diode capacitance Note 1. P ulse test: t p = 300 s; ä = 0.02 Cd IR V R = 50 V ; note 1 V R = 70 V ; note 1 IF = 5 m A f = 1 M Hz; V R = 0; M ax 410 750 1 100 10 100 2 Unit mV mV V nA A ps pF Marking Type Marking BAS70 73* BAS70-04 74* BAS70-05 75* BAS70-06 76* BAS70-07 77p +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1