BAT14-03W

S MD Type Silicon Schottky Diode BAT14-03W Diodes SOD-323 +0.1 1.7-0.1 Unit: mm DBS mixer application to 12GHz +0.1 2.6-0.1 1.0max Medium barrier type Low capacitance 0.475 0.375 Absolute Maximum Ratings Ta = 25 Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Total power dissipation Junction ambient (1) Symbol VR IF Top Tstg Ts 85 Ptot RthJA RthJS Value 4 90 -55 to+125 -55 to+150 100 450 690 Unit V mA mW Junction-soldering point Note: 1.Package mounted on an epoxy pcb 40 mm 40 mm K/W 15 mm/1cm 2 Cu. Electrical Characteristics T a = 25 Param eter Breakdown Voltage Forward voltage I (BR) = 5 IF = 1 m A I F = 10 m A Diode capacitance Differential forward resistance V R = 0; f = 1 MHz I F = 10 m A/50 m A CT RF A Sym bol V (BR) VF Min 4 0.36 0.48 0.43 0.55 0.22 5.5 0.52 0.66 0.35 pF Typ Max Unit V V Marking Marking O +0.05 0.1-0.02 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1