BAT14-099

S MD Type Silicon Dual Schottky Diode BAT14-099 Diodes Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Forward current Power dissipation, T S 55 Sym bol VR IF P tot T stg T op R th JA R th JS Value 4 90 100 -55 to +150 -55 to +150 580 340 K/W K/W Unit V mA mW Storage tem perature range Operating tem perature range Junction - am bient 1) Junction - soldering point Note 1.Package m ounted on alum ina 15 m m 16.7 m m to 0.7 m m . Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Forward voltage matching Diode capacitance Forward resistance Symbol V BR VF ÄV F CT RF Conditions IR = 5 A Min 4 0.43 0.55 10 0.35 5.5 mV pF Typ Max Unit V V IF = 1 mA IF = 10 mA IF = 10 mA V R = 0 V, f = 1 MHz IF = 10 mA / 50 mA Marking Marking S9 www.kexin.com.cn 1