BAT17-04

S MD Type Silicon Schottky Diode BAT17-04;BAT17-05;BAT17-06 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 For mixer applications in VHF/UHF range For high-speed switching application 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a r a m e te r D io d e r e v e r s e v o lta g e F o rw a rd c u rre n t T o ta l p o w e r d is s ip a tio n B A T 1 7 -0 4 , B A T 1 7 -0 6 , T s B A T 1 7 - 0 5 ,T s 46 Tj T op T s tg 150 - 5 5 to + 1 2 5 - 5 5 to + 1 5 0 61 P to t 150 mW S ym bol VR IF V a lu e 4 130 U n it V mA J u n c tio n te m p e r a tu r e O p e r a tin g te m p e r a tu r e r a n g e S to r a g e te m p e r a tu r e J u n c tio n - s o ld e r in g p o in t( N o te 1 ) B A T 1 7 -0 4 , B A T 1 7 -0 6 B A T 1 7 -0 5 N o te R th J S 590 690 K /W 1 .F o r c a lc u la tio n o f R th J A p le a s e r e fe r to A p p lic a tio n N o te T h e r m a l R e s is ta n c e +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type BAT17-04;BAT17-05;BAT17-06 Electrical Characteristics Ta = 25 Parameter Breakdown voltage Symbol V (BR) Conditions I(BR) = 10 VR = 3 V Reverse current IR VR = 4 V V R = 3 V, TA = 60 IF = 0.1 mA Forward voltage VF IF = 1 mA IF = 10 mA Forward voltage matching(Note 1) Diode capacitance Differential forward resistance Note 1.ÄV F is the difference between lowest and highest VF in multiple diode component. ÄV F CT RF IF = 1 mA V R = 0 , f = 1 MHz IF = 5 mA, f = 10 kHz 0.4 0.55 8 200 250 350 275 340 425 A Min 4 0.25 10 1.25 350 450 600 20 0.75 15 Typ Max Diodes Unit V A mV mV pF Marking Type Marking BAT17-04 54s BAT17-05 55s BAT17-06 56s 2 www.kexin.com.cn