BAT17-06W

S MD Type Silicon Schottky Diode BAT17-04W,BAT17-05W,BAT17-06W Diodes Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Total power dissipation Junction tem perature Operating tem perature range Storage tem perature Junction - soldering point(Note 1) Note 1.For calculation of RthJA please refer to Application Note Therm al Resistance TS 92 Sym bol VR IF P tot Tj T op T stg R thJS Value 4 130 150 150 -55 to +125 -55 to +150 390 K/W Unit V mA mW Electrical Characteristics Ta = 25 Param eter Breakdown voltage Sym bol V (BR) Conditions I (BR) = 10 VR = 3 V Reverse current IR VR = 4 V V R = 3 V, T A = 60 I F = 0.1 m A Forward voltage VF IF = 1 m A I F = 10 m A Forward voltage m atching(Note 1) Diode capacitance Differential forward resistance Note 1.ÄV F is the difference between lowest and highest V F in m ultiple diode com ponent. ÄV F CT RF IF = 1 m A V R = 0 , f = 1 MHz I F = 5 m A, f = 10 KHz 0.4 0.55 8 200 250 350 275 340 425 A Min 4 0.25 10 1.25 350 450 600 20 0.75 15 mV pF mV A Typ Max Unit V Marking Type Marking BAT17-04W BAT17-05W BAT17-06W 54S 55S 56S www.kexin.com.cn 1