S MD Type
Schottky barrier diode BAT254
Diodes
SOD110
Unit: mm
Features
Low forward voltage Guard ring protoected Very small ceramic SMD package.
cathode idenfifier
Absolute Maximum Ratings Ta = 25
Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forwrad current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb -65 tp 1s; ä tp < 1s -65 0.5 Conditions Min Max 30 200 300 600 +150 125 +125 Unit V mA mA mA
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1
S MD Type
Schottky barrier diode BAT254
Diodes
Electrical Characteristics Ta = 25
Parameter Symbol Conditions IF = 0.1 mA IF = 1 mA forward voltage VF IF = 10 mA IF = 30 mA IF = 100 mA reverse current IR VR = 25 V, note 1 when switched from IF = 10 mA to reverse recovery time trr IR = 10 mA; RL = 100 measured at IR = 1 mA diode capacitance thermal resistance from junction to ambient Note 1.Pulsed test: tp = 300 s, ä = 0.02. Cd Rth j-a f = 1 MHz; VR = 1 V; note 2 10 315 pF K/W 5 ns Max 240 320 400 500 800 2 A mV Unit
2.Refer to SOD110 standard mounting conditions.
Marking
Marking L4
2
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