BAT54SW

S MD Type Schottky barrier(double) diodes BAT54W Series Diodes Features Low forward voltage Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Total power dissipation (per package) Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Ptot Tstg Tj Tamb Rth j-a -65 tp 1 s; d tp < 10 ms Tamb 25 -65 0.5 Conditions Min Max 30 200 300 600 200 +150 125 +125 625 K/W Unit V mA mA mA mW Electrical Characteristics T a = 25 Param eter Sym bol Conditions I F = 0.1 m A IF = 1 m A Forward voltage VF I F = 10 m A I F = 30 m A I F = 100 m A Reverse current Reverse recovery tim e Diode capacitance Note 1. Pulse test: t p 300 s; ä 0.02. IR t rr Cd V R = 25 V; Note 1 when switched from I F = 10 m A to I R = 10 m A; R L = 100 m easured at I R = 1 m A 10 pF Max 240 320 400 500 800 2 5 A ns mV Unit f = 1 MHz; V R = 1 V; Marking Type Marking BAT54W L4 BAT54AW 42 BAT54CW 43 BAT54SW 44 www.kexin.com.cn 1