BAT62-03W

S MD Type Silicon Schottky Doide BAT62-03W Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Low Barrier diode for detectors up to GHz frequencies +0.1 2.6-0.1 1.0max 0.475 0.375 Absolute Maximum Ratings Ta = 25 Parameter Diode reverse voltage Forward current Junction current Storage temperature Total power dissipation Junction ambient (1) Symbol VR IF Tj Tstg Ts 85 Ptot RthJA RthJS Value 40 40 150 -55 to+150 100 650 810 Unit V mA mW K/W K/W Junction-soldering point Note: 1.Package mounted on an epoxy pcb 15 mm 16.7mmm 0.7 mm Electrical Characteristics Ta = 25 Parameter Breakdown current Forward voltage Diode capacitance Case capacitance Differential forward resistance Series inductance chip to ground Symbol IR VF CT CC RO Ls Test Condition V R = 40 V, T A = 25 IF = 2 mA V R = 0; f = 1 MHz f = 1 MHz V R = , f = 10 kHz 0.58 0.35 0.1 225 2 Min Typ Max 10 1 0.6 Unit A V pF pF k nH Marking Marking L +0.05 0.1-0.02 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1