S MD Type
Silicon Schottky Doide BAT62-03W
Diodes
SOD-323
+0.1 1.7-0.1
Unit: mm
Low Barrier diode for detectors up to GHz frequencies
+0.1 2.6-0.1
1.0max
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter Diode reverse voltage Forward current Junction current Storage temperature Total power dissipation Junction ambient
(1)
Symbol VR IF Tj Tstg Ts 85 Ptot RthJA RthJS
Value 40 40 150 -55 to+150 100 650 810
Unit V mA
mW K/W K/W
Junction-soldering point Note: 1.Package mounted on an epoxy pcb 15 mm
16.7mmm
0.7 mm
Electrical Characteristics Ta = 25
Parameter Breakdown current Forward voltage Diode capacitance Case capacitance Differential forward resistance Series inductance chip to ground Symbol IR VF CT CC RO Ls Test Condition V R = 40 V, T A = 25 IF = 2 mA V R = 0; f = 1 MHz f = 1 MHz V R = , f = 10 kHz 0.58 0.35 0.1 225 2 Min Typ Max 10 1 0.6 Unit A V pF pF k nH
Marking
Marking L
+0.05 0.1-0.02
+0.1 1.3-0.1
Features
+0.05 0.3-0.05
+0.05 0.85-0.05
www.kexin.com.cn
1
很抱歉,暂时无法提供与“BAT62-03W”相匹配的价格&库存,您可以联系我们找货
免费人工找货