BAT62-07W

S MD Type Silicon Schottky Diode BAT62-07W Diodes SOT-343 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Parameter Diode reverse voltage Forward current Total power dissipation, T S = 103 Junction temperature Storage temperature range Junction - ambient Junction - soldering point Symbol VR IF P tot Tj T stg R th JA R th JS Value 40 20 100 150 -55 to + 150 630 470 K/W K/W Unit V mA mW Electrical Characteristics Ta = 25 Parameter Reverse current Forward voltage Diode capacitance Case capacitance Differential resistance Series inductance chip to ground Symbol IR IF CT CC RO LS Test Condition V R = 40 V IF = 2 mA f = 1 MHz; V R = 0 f = 1 MHz V R = 0, f = 10 KHz 0.58 0.35 0.1 225 2 Min Typ Max 10 1 0.6 Unit A V pF pF K nH Marking Marking 62s www.kexin.com.cn 1