BAT62

S MD Type Silicon Schottky Diode BAT62 Diodes Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Param eter Reverse voltage Forward current Total power dissipation, T S Junction tem perature Storage tem perature range Junction - am bient 1) Junction - soldering point Note 1.Package m ounted on alum ina 15 m m 16.7 m m 0.7 m m . 85 Sym bol VR IF P tot Tj T stg R th JA R th JS Value 40 20 100 150 -55 to + 150 810 650 K/W K/W Unit V mA mW Electrical Characteristics Ta = 25 Param eter Reverse current Forward voltage Diode capacitance Case capacitance Differential resistance Series inductance Sym bol IR IF CT CC RO LS V R = 0, f = 10 KHz Test Condition V R = 40 V IF = 2 m A f = 1 MHz; V R = 0 0.58 0.35 0.1 225 2 Min Typ Max 10 1 0.6 Unit A V pF pF K nH Marking Marking 62 www.kexin.com.cn 1