BAT64-04

S MD Type Silicon Schottky Diodes BAT64 series Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 For low-loss,fast-recovery, meter protection bias isolation and clamping applications Integrated diffused guard ring Low forward current 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r D io d e re ve rs e vo lta g e F o rw a rd c u rre n t A ve ra g e fo rw a rd c u rre n t (5 0 /6 0 H z,s in u s ) S u rg e fo rw a rd c u rre n t (t 10 m s) S ym b o l VR IF IF A V IF S M P to t Tj T stg R th R th JA JS M ax 40 250 120 800 250 150 -5 5 to + 1 5 0 495 355 U n it V mA mA mA mW T o ta l p o w e r d is s ip a tio n T s = 6 1 J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re J u n c tio n a m b ie n t (N o te 1 ) J u n c tio n s o ld e rin g p o in t N o te 1 . P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m 40 m m m KW KW 1 .5 m m /0 .5 c m 2 C u Electrical Characteristics Ta = 25 Param eter Reverse current Sym bol IR Conditions V R = 25 V,T A = 25 V R = 25 V,T A = 85 IF = 1 m A Forward voltage VF I F = 10 m A I F = 30 m A I F = 100 m A Diode capacitance CT V R = 1 V,f = 1 MHz 320 385 440 570 4 Min Typ Max 2 200 350 430 520 750 6 Unit A mV V V V pF Marking Type Marking BAT64 63s BAT64-04 64s BAT64-05 65s BAT64-06 66s +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1