BAT68-03W

S MD Type Silicon Schottky Diode BAT68-03W Diodes SOD-323 +0.1 1.7-0.1 Unit: mm For mixer applications in the VHF/UHF range +0.1 2.6-0.1 1.0max For high speed switching 0.475 0.375 Absolute M axim um R atings Ta = 25 Param eter D iode reverse voltage Forward current Total Power dissipation Junction tem perature O perating tem perature range Storage tem perature Junction am bient Junction - soldering point TS = 95 Sym bol VR IF P tot Tj T op T stg R thJA R thJS Value 8 130 150 150 -65 to +150 -65 to +150 445 365 K/W K/W U nit V mA mW Electrical Characteristics Ta = 25 Parameter Breakdown voltage Reverse current Symbol V (BR) IR Conditions I(BR) = 10 A Min 8 0.1 1.2 318 340 390 340 500 1 10 pF Typ Max Unit V A V R = 1 V, T A = 25 V R = 1 V, T A = 60 Forward voltage Diode capacitance Differential forward resistance Forward current I F = f ( TA*; TS) VF CT RF IF = 1 mA IF = 10 mA V R = 0 V, f = 1 MHz IF = 5 mA +0.05 0.1-0.02 mV *): mounted on alumina 15mm x 16.7mm x 0.7mm Marking Marking K +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1