BAT68W

S MD Type Silicon Schottky Diodes BAT68W Diodes Features For mixer applications in the VHF/UHF range For high speed switching Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Total power dissipation Junction tem perature O perating tem perature range Storage tem perature Junction - am bient (Note 1) T S = 97 Sym bol VR IF P tot Tj T op T stg R thJA R thJS Value 8 150 150 150 -65 to+150 -65 to+150 435 355 K/W K/W Unit V mA mW Junction - soldering point Electrical Characteristics Ta = 25 Param eter Breakdown voltage Reverse current Sym bol V (BR) IR Conditions I (BR) = 100 µA V R = 1 V, T A = 25 V R = 1 V, T A = 60 Forward voltage Diode capacitance Differential forward resistance VF CT RF IF = 1 m A I F = 10 m A V R = 1 V, f = 1 MHz IF = 5 m A 340 318 390 Min 8 0.1 1.2 340 500 1 10 pF Typ Max Unit V A mV Marking Marking 83s www.kexin.com.cn 1