BAT74S

S MD Type Schottky Barrier Double Diode BAT74S Diodes SOT-363 +0.1 1.3-0.1 0.65 Unit: mm Features Low forward voltage Guard ring protected 0.1max +0.15 2.3-0.15 0.525 0.36 Small SMD package. +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 Absolute Maximum Ratings Ta = 25 Parameter Per diode continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature Double diode operation continuous reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current thermal resistance from junction to ambient Note 1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in reverse and the other in forward operation at the same moment, total device current is max. 200 mA. VR VR IF IFRM R th j-a tp 1 s; ä 0.5 series connection 30 60 110 (1) Symbol Conditions Min +0.05 0.95-0.05 Max Unit VR IF IFRM IFSM T stg Tj T amb -65 tp 1 s; ä tp < 10 ms -65 0.5 30 200 300 600 +150 125 +125 V mA mA mA V V mA mA K/W 200 416 +0.1 1.25-0.1 www.kexin.com.cn 1 S MD Type BAT74S Diodes Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 0.1 mA IF = 1 mA forward voltage VF IF = 10 mA IF = 30 mA IF = 100 mA reverse current reverse recovery time diode capacitance Note 1. Pulse test: tp = 300 s; ä = 0.02. IR trr Cd V R = 25 V; note 1 when switched from IF = 10 mA to IR = 10 mA; R L = 100 ;measured at IR = 1 mA 10 pF Max 200 260 340 420 750 2 5 A ns mV Unit f = 1 MHz; V R = 1 V Marking Marking 74 2 www.kexin.com.cn