BAT754L

S MD Type Schottky Barrier Triple Diode BAT754L Diodes SOT-363 +0.1 1.3-0.1 0.65 Unit: mm Features Very low forward voltage Guard ring protected Low diode capacitance Three independent diodes in a small plastic SMD package. 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.15 2.3-0.15 0.525 0.36 +0.05 0.1-0.02 Absolute Maximum Ratings Ta = 25 Parameter Per diode continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient VR IF IFRM IFSM Tstg Tj Tamb Rth j-a -65 tp 1 s; ä 0.5 30 200 300 600 -65 +150 125 +125 416 K/W V mA mA mA Symbol Conditions Min Max Unit tp < 10 ms E le c tric a l C h a ra c te ris tic s T a = 2 5 P a ra m e te r S ym bol C o n d itio n s I F = 0 .1 m A IF = 1 m A fo rw a rd v o lta g e VF IF = 1 0 m A IF = 3 0 m A IF = 1 0 0 m A re v e rs e c u rre n t d io d e c a p a c ita n c e N o te 1 . P u ls e te s t: tp = 3 0 0 s ; ä = 0 .0 2 . IR Cd V R = 2 5 V ; n o te 1 f = 1 M H z; V R = 1 V M ax 200 260 340 420 750 2 10 A pF mV U n it Marking Marking L1 +0.05 0.95-0.05 +0.1 1.25-0.1 www.kexin.com.cn 1