BAT754S

S MD Type Schottky barrier (double) diodes BAT754 series Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Ultra high switching speed Guard ring protected Small plastic SMD package Low diode capacitance. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFRM IFSM Tstg Tj Tamb -65 tp < 1 s;ä < 0.5 tp = 8.3 ms half sinewave;JEDEC method -65 Conditions Min Max 30 200 300 600 +150 125 +125 Unit V mA mA mA E le c tric a l C h a ra c te ris tic s T a = 2 5 P a ra m e te r S ym b o l C o n d itio n s I F = 0 .1 m A IF = 1 m A F o rw a rd vo lta g e VF IF = 1 0 m A IF = 3 0 m A IF = 1 0 0 m A R e ve rs e c u rre n t D io d e c a p a c ita n c e N o te 1 . P u ls e te s t: t p < 3 0 0 s; ä 0 .0 2 . IR Cd V R = 2 5 V ; N o te 1 f = 1 M H z; V R = 1 V 600 2 10 M in M ax 200 260 340 420 U n it mV mV mV mV mV A pF Marking Type Marking BAT754 2K BAT754A 2L BAT754C 2M BAT754S 2N +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1