BAT854CW

S MD Type Schottky barrier (double) diodes BAT854W;BAT854AW BAT854CW;BAT854SW Diodes Features Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Tstg Tj Tamb Rth j-a -65 tp 1 s; d 0.5 Conditions Min Max 40 200 300 1 -65 +150 150 +150 625 K/W Unit V mA mA A t = 8.3 ms half sinewave;JEDEC method Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 0.1 mA IF = 1 mA Forward voltage VF IF = 10 mA IF = 30 mA IF = 100 mA Continuous reverse current Diode capacitance Note 1. Pulse test: tp 300 s; ä 0.02. IR Cd VR = 25 V; Note 1 f = 1 MHz; VR = 1 V Typ 200 260 340 420 550 0.5 20 A pF mV Max Unit Marking Type Marking BTA854W 81 BAT854AW 82 BAT854CW 83 BAT854SW 84 www.kexin.com.cn 1