BAV103

S MD Type High Voltage,General Purpose Diode KAV103(BAV103 Diodes LL-34 Unit: mm Features Silicon Epitaxial Planar Diodes For general purpose 2.64REF 0.50 0.35 1.50 1.30 3.60 3.30 Absolute Maximum Ratings Ta = 25 Parameter Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Total Power Dissipation at TA = 25 Linear Derating Factor from TA = 25 Thermal Resistance Junction-to-Ambient Operating Junction Temperature Storage Temperature R JA Symbol Wiv IO IF if iF(surge) Rating 200 200 500 600 1 4 Unit V mA mA mA A mW mW/ /W PD 500 3.33 350 -65 to +200 -65 to +200 TJ Tstg Electrical Characteristics Ta = 25 Parameter Breakdown Voltage Reverse Leakage Symbol BV IR IR = 100 uA VR = 200 V VR = 200 V TA = 150 Forward Voltage Capacitance Reverse Recovery Time VF CT TRR IF = 100 mA IF = 200 mA VR = 0.0 V,f = 1.0 MHz IF= IR =30 mA ,IRR= 1.0 mA,RL = 100 Testconditons Min 250 100 100 1.00 1.25 5.0 50 Typ Max Unit V nA uA V V pF ns www.kexin.com.cn 1