BAV170

S MD Type Low-leakage double diode BAV170 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Low leakage current: typ. 3 pA Switching time: typ. 0.8 s 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Plastic SMD package 2 0.55 0.4 3 +0.05 0.1-0.01 Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFRM square wave; Tj = 25 Non-repetitive peak forward current IFSM t=1 s prior to surge 4 1 0.5 250 -65 +150 150 360 500 K/W K/W mW A single diode loaded double diode loaded Conditions Min Max 85 75 215 125 500 mA Unit V V mA t = 1 ms t=1s Total power dissipation Storage temperature Junction temperature thermal resistance from junction to tie-point thermal resistance from junction to ambient Ptot Tstg Tj Rth j-t p Rth j-a Ta mb = 25 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type BAV170 Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 1 mA Forward voltage VF IF = 10 mA IF = 50 mA IF = 150 mA Reverse current Diode capacitance Reverse recovery time IR Cd trr VR = 75 V VR = 75 V; Tj = 150 f = 1 MHz; VR = 0; when switched from IF = 10 mA to IR = 10 mA; RL = 100 ;measured at IR = 1 mA; 0.003 3 2 0.8 3 Typ Max 900 Diodes Unit 1000 1100 1250 5 80 mV nA pF ìs Marking Marking JXp 2 www.kexin.com.cn