BAV170T

S MD Type SURFACE MOUNT LOW LEAKAGE DIODE BAV170T; BAV199T Diodes SOT-523 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Unit: mm +0.01 0.1-0.01 2 1 +0.15 1.6-0.15 Very Low Leakage Current +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Repetitive Peak Forward Current Symbol VRRM VRWM VR VR(RMS) IFM IFRM @ t = 1.0 Non-Repetitive Peak Forward Surge Current IFSM s Single Diode Double Diode Conditions Value 85 85 85 60 215 125 500 4 1 0.5 150 833 -65 to + 150 mW /W A mA Unit V V V V mA @ t = 1.0 ms @ t = 1.0 s Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Note PD RèJA Tj , TSTG 1.Device mounted on FR-4 PC board with recommended pad layout +0.05 0.8-0.05 Ultra-Small Surface Mount Package 0.55 Features www.kexin.com.cn 1 S MD Type BAV170T; BAV199T Electrical Characteristics Ta = 25 Parameter Reverse Breakdown Voltage (Note 2) Symbol V(BR)R Conditions IR = 100 A Min 85 Typ Diodes Max Unit V IF = 1.0 mA Forward Voltage (Note 2) VF IF = 10 mA IF = 50 mA IF = 150 mA Leakage Current (Note 2) Total Capacitance Reverse Recovery Time Note 2.Short duration test pulse used to minimize self-heating effect. IR CT trr VR = 75 V VR = 75 V; Tj = 150 f = 1 MHz; VR = 0 V IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 2 0.90 1.0 1.1 1.25 5.0 80 pF 3.0 ìs nA V Marking Type Marking BAV170T 51 BAV199T 52 2 www.kexin.com.cn